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Micron Technology Plans $24 Billion Investment in NAND Flash Production Over the Next 10 Years
Micron Technology plans to build an advanced wafer fabrication plant in Singapore, investing $24 billion over the next 10 years. The new plant will eventually provide 700,000 square feet of cleanroom space. Micron stated that wafer production will begin in the second half of 2028, helping it meet the growing market demand for NAND flash memory driven by the rapid development of AI and data-intensive applications.
The new plant is located within Micron's existing NAND flash memory manufacturing park. A groundbreaking ceremony was held on Tuesday, attended by Singapore's Deputy Prime Minister and Minister for Trade and Industry Gan Kim Yong, Permanent Secretary for Trade and Industry Ma Xuan Ren, Managing Director of the Singapore Economic Development Board Lai Jia Ming, and Jurong Group CEO Fu Mei Jing.
Manish Bhatia, Executive Vice President of Global Operations at Micron Technology, expressed her gratitude to the Singapore government, including the Singapore Economic Development Board and Jurong Group, stating that this investment underscores Micron's long-term commitment to Singapore, a crucial hub in its global manufacturing network that helps strengthen supply chain resilience.
Micron already has a large-scale manufacturing facility in Singapore, where 98% of its NAND Flash memory is manufactured. Micron is also building a $7 billion advanced packaging plant in Singapore, also within the same Singapore manufacturing park, which is progressing according to plan and is expected to contribute to Micron's HBM supply in 2027. With HBM becoming part of Micron's Singapore manufacturing strategy, the company expects synergies between NAND flash memory and DRAM production. Micron will flexibly adjust the new plant's capacity ramp-up speed to adapt to market demand.
Micron stated that the investment in the advanced wafer fabrication plant will create approximately 1,600 jobs. Combined with the previously announced 1,400 jobs from the HBM advanced packaging plant, this expansion will add a total of approximately 3,000 jobs. These positions will focus on wafer fab engineering and operations, integrating AI, advanced robotics, and smart manufacturing technologies to improve efficiency and innovation.
In January 2026, Micron made several significant moves. On January 16th, Micron officially broke ground on its massive DRAM memory wafer fab in Clay, Onondaga County, New York. The project, with a total investment of $100 billion, plans to build up to four wafer fabs, becoming the largest semiconductor manufacturing base in the United States and creating approximately 50,000 jobs. The fab is expected to begin production around 2030, with capacity gradually increasing over the next decade. Micron stated that this investment will help achieve its goal of producing 40% of its DRAM products domestically and strengthen the resilience of the U.S. semiconductor supply chain.
On January 17th, Micron signed an exclusive strategic cooperation agreement with Powerchip Semiconductor, under which Micron will acquire Powerchip's P5 wafer fab in the Tongluo Science Park, Miaoli County, for $1.8 billion. This transaction will provide Micron with an existing 28,000-square-meter cleanroom for its 12-inch wafer production line. Micron will deploy a DRAM memory production line here, which is expected to make a meaningful contribution to Micron's DRAM wafer output starting in the second half of 2027. In addition, Micron will establish a long-term wafer foundry relationship with Powerchip Technology for advanced DRAM packaging, and Micron will also assist Powerchip in refining its existing niche DRAM process technologies at its Hsinchu P3 fab.
TrendForce states that with Micron's planned $1.8 billion acquisition of Powerchip's Tongluo fab, the two companies will establish a long-term DRAM advanced packaging foundry relationship. This collaboration will benefit Micron by adding advanced process DRAM capacity and increasing Powerchip's mature process DRAM supply, which is expected to increase global DRAM supply in 2027. It is estimated that the capacity contributed by the first phase of Micron's Tongluo project in the second half of 2027 will be equivalent to more than 10% of Micron's global capacity in the fourth quarter of 2026.
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Honda Motor Corporation announced that its joint venture with General Motors to manufacture fuel cell systems plans to cease production of fuel cell systems by the end of 2026.
This Michigan-based joint venture, established in January 2017, was the first automotive industry collaboration to produce low-cost fuel cell systems using a unified parts supplier, shared by both automakers. At the time, Honda announced an equal investment of $85 million with GM in the 50/50 joint venture.
Honda, with over 30 years of experience in fuel cell technology, will develop its next-generation hydrogen systems independently, without a partner. According to a press release, the automaker stated it will continue to seek opportunities to advance its hydrogen business and establish it as a core segment for Honda.
In-depth Analysis:
The fuel cell system partnership agreement between Honda and GM was first announced in July 2013. Although Honda stated that the collaboration had "achieved some positive results," after discussions regarding business continuity, the two companies ultimately reached a consensus to terminate production.
The joint venture began mass production of fuel cell systems in January 2024 at a 70,000-square-foot facility within General Motors' Brownstown, Michigan battery plant, which also currently assembles battery packs for the Cadillac Celestiq electric vehicle.
Last October, General Motors announced it would terminate its fuel cell development business under its Hydrotec brand and cease production of hydrogen fuel cells for data centers and power generation through its joint venture with Honda, FCSM. GM stated it would refocus its R&D efforts and financial resources on electric vehicles, batteries, and new charging technologies.
In July 2025, Stellantis Group also announced the cancellation of all its hydrogen fuel cell R&D projects in Europe for light commercial vehicles and the postponement of its hydrogen-powered truck launch plans—the first fuel cell trucks were originally scheduled for production last summer. The group cited limited accessibility to hydrogen refueling infrastructure and high funding requirements as the reasons for the decision.
In addition to its long-term commitment to fuel cell technology development, Honda is also adjusting its electrification strategy. Last May, Honda's global CEO, Toshihiro Mikoto, announced that the company would cut $20.7 billion in electric vehicle investment by 2030, focusing instead on launching new hybrid models.
Last October, Honda unveiled its next-generation hybrid electric vehicle (HEV) technology at the Honda Technology Symposium, including a new mid-size hybrid vehicle platform and a new V6 engine suitable for full-size hybrid models.
In December 2016, Honda launched its second-generation hydrogen-powered Clarity sedan in California, becoming the world's first automaker to launch a fuel cell vehicle. This fuel cell version of the Clarity also won the 2018 Ward's 10 Best Engines award, but all Clarity models ceased production in August 2021.
Like Honda, Hyundai has also incorporated fuel cell technology development into its long-term electrification strategy. At the 2025 Seoul Mobility Show last April, the company unveiled the all-new NEXO fuel cell crossover, with plans for a global launch in early 2026. However, Hyundai has not specified whether this new hydrogen-powered SUV will be available in the US market.
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Samsung to Adopt Hybrid Bonding for HBM4 Memory
High-bandwidth memory (HBM) stacks multiple memory devices on a base chip. Currently, memory chips in an HBM stack are typically connected together using microbumps (which transmit data, power, and control signals between stacked chips) and bonded using techniques such as Molded Underfill Quality Reflow (MR-MUF) or thermal compression using non-conductive film (TC-NCF).
These dies also use through-silicon vias (TSVs) embedded within each die for vertical interconnects (transmitting data, clock, control signals, power, and ground through each DRAM die). However, as HBM speeds increase and the number of DRAM devices grows, microbumps become inefficient as they limit performance and energy efficiency.
This is where hybrid bonding comes in. Hybrid bonding is a 3D integration technology that directly connects chips by bonding copper-to-copper and oxide-to-oxide surfaces, eliminating the need for microbumps. Hybrid bonding supports interconnect pitches below 10 μm, resulting in lower resistance and capacitance, higher density, better thermal performance, and thinner 3D stacks compared to traditional bump-based stacking.
However, there is a problem. Hybrid bonding is a rather expensive technology. While the three leading manufacturers of HBM memory considered using it for their 12-Hi HBM3E, Micron and Samsung ultimately used TC-NCF, while SK Hynix used MR-MUF. For HBM4, Samsung plans to use hybrid bonding, while SK Hynix is developing advanced MR-MUF technology as well as hybrid bonding as a backup process.
SK Hynix may use traditional molded underfill adhesive instead of hybrid bonding for a reason. The specialized equipment required for hybrid bonding is significantly more expensive than traditional packaging tools and requires more fab physical space.
This would impact capital efficiency, especially given the limited floor space available in wafer fabs. Therefore, SK Hynix is proceeding cautiously. If it finds that its advanced MR-MUF technology provides the same (or similar) performance results and good yields, it would prefer to continue using MR-MUF for at least another generation.
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